1999. 9. 30 1/3 semiconductor technical data kn2222s/as epitaxial planar npn transistor revision no : 2 general purpose application. switching application. features low leakage current : i cex =10na(max.) ; v ce =60v, v eb(off) =3v. low saturation voltage : v ce(sat) =0.3v(max.) ; i c =150ma, i b =15ma. complementary to the kn2907s/2907as. maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ characteristic symbol rating unit kn2222s KN2222AS collector-base voltage v cbo 60 75 v collector-emitter voltage v ceo 30 40 v emitter-base voltage v ebo 5 6 v collector current i c 600 ma collector power dissipation (ta=25 1 ) p c 150 mw p c * 350 junction temperature t j 150 1 storage temperature range t stg -55 150 1 note : * package mounted on 99.5% alumina 10 ' 8 ' 0.6 j ) type name marking lot no. zba type name lot no. zga mark spec type mark kn2222s zba KN2222AS zga
1999. 9. 30 2/3 revision no : 2 electrical characteristics (ta=25 1 ) kn2222s/as * pulse test : pulse width # 300 s, duty cycle # 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current KN2222AS i cex v ce =60v, v eb(off) =3v - - 10 na collector cut-off current kn2222s i cbo v cb =50v, i e =0 - - 10 na KN2222AS v cb =60v, i e =0 - - 10 emitter cut-off current KN2222AS/s i ebo v eb =3v, i c =0 - - 10 na collector-base breakdown voltage kn2222s v (br)cbo i c =10 a, i e =0 60 - - v KN2222AS 75 - - collector-emitter * breakdown voltage kn2222s v (br)ceo i e =10ma, i b =0 30 - - v KN2222AS 40 - - emitter-base breakdown voltage kn2222s v (br)ebo i e =10 a, i c =0 5 - - v KN2222AS 6 - - dc current gain * kn2222s KN2222AS h fe (1) i c =0.1ma, v ce =10v 35 - - h fe (2) i c =1ma, v ce =10v 50 - - h fe (3) v ce =10ma, v ce =10v 75 - - h fe (4) i c =150ma, v ce =10v 100 - 300 kn2222s h fe (5) i c =150ma, v ce =10v 30 - - KN2222AS 40 - - collector-emitter * saturation voltage kn2222s v ce(sat) 1 i c =150ma, i b =15ma - - 0.4 v KN2222AS - - 0.3 kn2222s v ce(sat) 2 i c =500ma, i b =50ma - - 1.6 KN2222AS - - 1.0 base-emitter * saturation voltage kn2222s v be(sat) 1 i c =150ma, i b =15ma - - 1.3 v KN2222AS 0.6 - 1.2 kn2222s v be(sat) 2 i c =500ma, i b =50ma - - 2.6 KN2222AS - - 2.0 transition frequency kn2222s f t i c =20ma, v ce =20v, f=100mhz 250 - - mhz KN2222AS 300 - - collector output capacitance c ob v cb =10v, i e =0, f=1.0mhz - - 8 pf
1999. 9. 30 3/3 kn2222s/as revision no : 2 collector power dissipation c ambient temperature ta ( c) pc - ta capacitance c (pf) 0 ob 30 10 3 1 collector-base voltage v (v) cb c - v h - i c collector current i (ma) 1 3 10 30 1k fe dc current gain h 10 collector current i (ma) saturation voltage 3 1 be(sat) 30 10 c v , v - i fe c 300 1k 30 50 100 300 500 100 v =10v ce be(sat) ce(sat) c v ,v (v) ce(sat) 100 300 1k 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 10 v be(sat) ce(sat) v ob cb 100 200 p (mw) i /i =10 c b 2 4 6 8 12 i =0 f=1mhz e 10 0 0 25 50 75 100 125 150 100 200 300 400 500 mounted on 99.5% aiumina 10 x 8 x 0.6mm ta=25 c 1 2 1 175 2
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